Monte Carlo calculation of hot electron drift velocity in silicon (100)-inversion layer by including three subbands
- 31 August 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 27 (6), 657-660
- https://doi.org/10.1016/0038-1098(78)90465-9
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- High-field drift velocity of silicon inversion layers—a Monte Carlo calculationJournal of Applied Physics, 1977
- Hot-electron effects in silicon quantized inversion layersPhysical Review B, 1976
- Hot electrons in Si inversion layerSurface Science, 1976
- The current-voltage characteristics of field-effect transistors with short channelsSolid State Communications, 1976
- Non−Ohmic electron conduction in silicon surface inversion layers at low temperaturesJournal of Applied Physics, 1975
- Warm and hot carriers in silicon surface-inversion layersPhysical Review B, 1974
- Hot carriers in silicon surface inversion layersJournal of Applied Physics, 1974
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Hot Electron Effects and Saturation Velocities in Silicon Inversion LayersJournal of Applied Physics, 1970