The Effect of Uniaxial Stress on Ge p-n Junctions with Various Doping Densities

Abstract

When p-n junctions with various doping densities are subjected to uniaxial stress perpendicular to the (111) junction plane, an extreme increase in the excess current with stress is found, in contrast with a small increase in the Esaki current. This change in the excess current of Esaki diodes is mainly ascribed to properties of heavily doped p-n junctions regardless of the existence of the Esaki characteristics. The experiments indicate that the stress sensitivity of p-n junctions becomes larger as the doping density becomes larger.