X-ray evidence for a terraced GaAs/AlAs superlattice
- 1 July 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (1), 59-61
- https://doi.org/10.1063/1.94120
Abstract
We report an x-ray diffraction study of a GaAs/AlAs superlattice, showing satellite reflections which lie on a line making a constant, nonzero angle with the [00L] reciprocal lattice rod containing the fundamental reflections. The results indicate a terraced superlattice structure in which the chemical modulation of the GaAs/AlAs layers is tilted with respect to the (001) lattice planes. This tilt imposes a reduced lateral domain size on the superlattice, which can be deduced from the angular widths of the satellite reflections.Keywords
This publication has 7 references indexed in Scilit:
- Nb-Ta metal superlatticesJournal of Physics F: Metal Physics, 1981
- Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7–0.8 µm Wavelength RegionJapanese Journal of Applied Physics, 1981
- Observation of Folded Acoustic Phonons in a Semiconductor SuperlatticePhysical Review Letters, 1980
- New Class of Layered MaterialsPhysical Review Letters, 1980
- X-ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayersJournal of Applied Physics, 1980
- Interdiffusion in composition-modulated copper-gold thin filmsJournal of Applied Physics, 1977
- X-ray diffraction study of a one-dimensional GaAs–AlAs superlatticeJournal of Applied Crystallography, 1977