Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

Abstract

Spectroscopic ellipsometry (SE) together with the optical transmission method is successfully used to determine the refractive index $n$ and absorption coefficient α of undoped gallium nitride film over the spectral range of 0.78–4.77 eV of photon energy. The SE measurement is carried out at angle of incidence of 60° over the 1.5–4.77 eV energy range and optical transmission measurement over the 0.78–3.55 eV energy range. The refractive index $n$ and absorption coefficient α obtained by both methods show unique results in the overlap wavelength region. Refractive index $n$ is found to follow the Sellmeir dispersion relationship $n^2{\text{(λ)=2.27}}^2{\text{+304.7}}^2{\mathrm{/(\lambda }}^2{\text{−294.0}}^2)$ below the fundamental band edge. A free excitonic structure at the band is clearly observed at room temperature, with the transmission energy of free exciton at 3.44 eV, which is in reasonable agreement with the reported results.