High-performance Te trilayer for optical recording

15 February 1979

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 34 (4), 275-276
https://doi.org/10.1063/1.90757

Abstract

The optical‐recording characteristics of a fully encapsulated Te trilayer structure are reported. The results demonstrate a 400% improvement in sensitivity compared to a Ti trilayer, at a recording wavelength of 488 nm, while maintaining high SNR (≳50 dB) on playback. This Te trilayer can be optimized for use with a GaAs diode laser recording system.

Keywords

LAYERS
OPTICAL EQUIPMENT
TELLURIUM
SENSITIVITY
SEMICONDUCTOR LASERS
NOISE
GALLIUM ARSENIDES

This publication has 2 references indexed in Scilit:

Optical disk systems emerge
IEEE Spectrum, 1978
Antireflection structures for optical recording
IEEE Journal of Quantum Electronics, 1978

Cited by 36 articles