The excitation spectrum of boron in silicon under uniaxial stress
- 1 May 1965
- journal article
- Published by Elsevier in Physics Letters
- Vol. 16 (1), 26-27
- https://doi.org/10.1016/0031-9163(65)90384-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Wave functions and energies of shallow acceptor states in germaniumJournal of Physics and Chemistry of Solids, 1964
- INFRARED ABSORPTION LINES IN BORON-DOPED SILICONCanadian Journal of Physics, 1963
- Theory of shallow acceptor states in Si and GeJournal of Physics and Chemistry of Solids, 1962
- Infrared spectra of Group III acceptors in siliconJournal of Physics and Chemistry of Solids, 1958
- Shallow Impurity States in Silicon and GermaniumPublished by Elsevier ,1957
- Optical Investigations of Impurity Levels in SiliconThe Journal of Physical Chemistry, 1953