Growth and characterization of thin‐film compound semiconductor photovoltaic heterojunctions

Abstract
The fabrication and characteristics of several vacuum‐deposited photovoltaicheterojunctions involving ternary compounds (CuInSe2, CuInS2, and CuInTe2) and a binary compound (InP) with Cds are described. The light and dark I Vcharacteristics, spectral response data, and cell parameters (fill factors, open‐circuit voltages, short circuit currents, efficiencies) are reported for the thin‐film solar cells.