Marked Reduction of the Surface/Interface States of GaAs by (NH4)2Sx Treatment
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12A), L2255
- https://doi.org/10.1143/jjap.28.l2255
Abstract
MIS capacitors have been fabricated on (NH4)2S x -treated GaAs using a SiO x insulator prepared by conventional resistive-heating evaporation. The MIS interface state density was found to be about 1.2×1011 cm-2·eV-1 in a wide range of the band gap, which is two orders of magnitude less than that on the as-etched GaAs.Keywords
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