Gallium aluminium arsenide heterostructure lasers: Factors affecting catastrophic degradation
- 31 July 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (7), 595-602
- https://doi.org/10.1016/0038-1101(77)90097-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Narrow-beam five-layer (GaAl)As/GaAs heterostructure lasers with low threshold and high peak powerJournal of Applied Physics, 1976
- Filaments in semiconductor lasersApplied Physics Letters, 1975
- Catastrophic failure in GaAs double-heterostructure injection lasersJournal of Applied Physics, 1974
- Dependence of Threshold Current Density and Efficiency on Fabry-Perot Cavity Parameters: Single Heterojunction (AlGa)As–GaAs Laser DiodesJournal of Applied Physics, 1972