Abstract
The charge distribution and energy levels of electrons trapped at two types of lattice defect in ionic solids (interstitial ions and F-centres) are calculated using a variation method which takes account of the fact that the field acting on the electron near such a defect depends upon the wave function of the electron itself. The model used for the interstitial ion consists of a point charge in a uniform polarizable medium while that for the F-centre consists of a potential well whose dimensions are decided by the charges and induced dipoles on the surrounding ions. The 1s-2p optical excitation energies are determined for F-centres in typical alkali- and silver-halides. Calculations of thermal activation energies from the 2p state to the conduction band and of thermal dissociation energies (1s state to conduction band) for the silver halides indicate that F-centres should play a more important part than interstitial ions in photoconductive processes in such materials.

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