Hexagonal-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition
- 1 January 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (1A), L4
- https://doi.org/10.1143/jjap.34.l4
Abstract
A hexagonal facet (HF) GaAs/AlGaAs laser with rectangular optical waveguides is proposed and its preliminary lasing characteristics are presented. The rectangular waveguide is parallel to one side of the HF laser and consists of the same (111)B growth plane and (110) sidewall facets as the HF laser structure. The number of rectangular waveguides extending from one HF laser is changed from one to four to study the effect of the waveguide on lasing characteristics by optical pumping at room temperature. The lasing light can be efficiently taken out from the point of the rectangular waveguides in all laser structures. These lasers keep a ring cavity mode of inscribed hexagon even if the waveguide structures couple with the HF laser structure.Keywords
This publication has 7 references indexed in Scilit:
- Novel Hexagonal-Facet GaAs/AlGaAs Laser Grown by Selective Area Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1993
- Self-Limited Facet Growth for GaAs Tetrahedral Quantum DotsJapanese Journal of Applied Physics, 1993
- Whispering-gallery mode microdisk lasersApplied Physics Letters, 1992
- Selective epitaxy of GaAs/AlGaAs on (111) B substrates by MOCVD and applications to nanometer structuresJournal of Crystal Growth, 1991
- Rectangular and L-shaped GaAs/AlGaAs lasers with very high quality etched facetsApplied Physics Letters, 1989
- Flow-Rate Modulation Epitaxy of GaAsJapanese Journal of Applied Physics, 1985
- Semiconductor injection lasers with a circular resonatorApplied Physics Letters, 1980