Photoemission from Si Induced by an Internal Electric Field
- 15 July 1960
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 119 (2), 621-622
- https://doi.org/10.1103/physrev.119.621
Abstract
External photoelectric emission from silicon with a threshold of response corresponding to the band gap (1.05 ev) has been observed from a back biased junction which had received a cesium surface treatment. This emission current is proportional to the intensity of the incident light. The spectral distribution of this field induced photoemission has been simply related to the spectral distribution of the fundamental absorption of silicon.
Keywords
This publication has 6 references indexed in Scilit:
- Electron Emission from Breakdown Regions in SiCJunctionsPhysical Review Letters, 1959
- Photoemissive, Photoconductive, and Optical Absorption Studies of Alkali-Antimony CompoundsPhysical Review B, 1958
- Electron Emission from Silicon p–n JunctionsNature, 1958
- Electron Emission from Avalanche Breakdown in SiliconPhysical Review B, 1957
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955
- Photoconductivity and Photoelectric Emission of Barium OxidePhysical Review B, 1951