The Characteristics of Al-Al2O3-Si Structures Formed by Reactive Suttering
- 1 November 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (11)
- https://doi.org/10.1143/jjap.7.1420
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Characteristics of Silicon Silicon-Dioxide Structures Formed by DC Reactive SputteringJapanese Journal of Applied Physics, 1968
- Al2O3-SILICON INSULATED GATE FIELD EFFECT TRANSISTORSApplied Physics Letters, 1968
- Phase Changes in Thin Reactively Sputtered Alumina FilmsJournal of the Electrochemical Society, 1966
- Physical limitations on the frequency response of a semiconductor surface inversion layerSolid-State Electronics, 1965