Oxygen Doping of Solution-Grown GaP

Abstract
The solubility of oxygen in Zn‐doped, solution‐grown was determined from the degree of compensation of the Zn by the oxygen electrons. An oxygen content of was obtained for crystals grown at 1144°C from melts that were doped with 0.016 m/o (mole per cent) . The solubility of in Ga as a function of temperature was also determined, and a distribution coefficient for oxygen between the solid and liquid of 0.0055 was derived. The implications of these findings for the generation of red luminescence in are discussed.