Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET
- 1 January 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (7), 602-603
- https://doi.org/10.1049/el:19990282
Abstract
An AlGaN/GaN HFET incorporating a piezoelectrically enhanced two-layer barrier structure has been fabricated and characterised. The gate leakage current was observed to be suppressed by one order of magnitude, compared to that in a conventional AlGaN/GaN HFET. Breakdown voltages in the piezoelectrically enhanced and conventional HFET structures are ~100 V and have positive temperature coefficients.Keywords
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