CMOS magnetic-field sensor system
- 1 August 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 29 (8), 1002-1005
- https://doi.org/10.1109/4.297713
Abstract
A magnetic-field sensor system integrated in CMOS technology with additional processing steps necessary for sensor fabrication is presented. The system contains a magnetoresistive permalloy microbridge acting as sensor, temperature compensation circuitry, programmable readout electronics, reference voltage bias, and clock generation. It features maximum magnetic flux sensitivity of 70 mV/µT (corresponds to the magnetic-field sensitivity of 88.2 mV/(A/m) @ µr = 1) and its temperature gain is below 260 ppm/øC in the range between -50øC and +100øCKeywords
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