How to use oxygen and atomic hydrogen to prepare atomically flat fcc Co(110) films
- 1 June 1999
- journal article
- research article
- Published by IOP Publishing in Europhysics Letters
- Vol. 46 (5), 589-594
- https://doi.org/10.1209/epl/i1999-00304-5
Abstract
It is shown that atomic hydrogen from a specially designed atomic beam source is well suited for removing chemisorbed oxygen from an fcc Co(110) film that has been grown on a Cu(110) substrate using oxygen as a surfactant. Exposing the oxygen-terminated Co surface to atomic hydrogen leads to a surface reaction which destroys the (3×1) ordered-O induced surface reconstruction of the Co film. Upon annealing at 380 K, the hydrogen remaining on the O-free Co surface can be completely desorbed. With this technique, it is possible for the first time to prepare about 15 monolayers thick, atomically-flat fcc Co(110) films.This publication has 26 references indexed in Scilit:
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