Stimulated emission at 2.8 μm from Hg-based quantum well structures grown by photoassisted molecular beam epitaxy
- 6 November 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (19), 2026-2028
- https://doi.org/10.1063/1.102152
Abstract
We report on the first observation of stimulated emission from Hg-based quantum well structures in which the active region is a HgCdTe superlattice. The laser structures were grown on (100) CdZnTe substrates photoassisted molecular beam epitaxy. Cleaved laser cavities were optically pumped using the 1.06 μm output from a cw Nd:YAG laser. Stimulated emission cavity modes were seen at cw laser power densities as low as 3.4 kW/cm2 and at temperatures ≥ 60 K.Keywords
This publication has 7 references indexed in Scilit:
- Standard relationships in the properties of Hg1−xCdxTeJournal of Vacuum Science & Technology A, 1989
- Properties of HgCdTe films and Hg-based quantum well structures grown by photoassisted molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989
- Room-temperature optically pumped Cd0.25Zn0.75Te/ZnTe quantum well lasers grown on GaAs substratesApplied Physics Letters, 1988
- HgMnTe light emitting diodes and laser heterostructuresJournal of Vacuum Science & Technology A, 1988
- Growth of high mobility n-type CdTe by photoassisted molecular beam epitaxyApplied Physics Letters, 1986
- Stimulated emission from Cd1−xMnxTe–CdTe heterostructures and Cd1−xMnxTe–Cd1−yMnyTe multiple quantum well structuresJournal of Vacuum Science & Technology A, 1986
- Stimulated emission from a Cd1−xMnxTe-CdTe multilayer structureApplied Physics Letters, 1985