Transparent gate silicon photodetectors
- 1 February 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (2), 90-97
- https://doi.org/10.1109/t-ed.1978.19044
Abstract
Optical and electrical properties of silicon imaging devices with In2O3-SnO2gates are reported. The optically transparent electrically conducting films were sputtered from both glass and metal targets. Quantum efficiencies of such devices are significantly better than photodiodes or polysilicon gate devices. The electrical properties such as dark current and interface state density are as low as conventional aluminum gate devices after appropriate anneals.Keywords
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