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The Epitaxial Growth of Ge on Si by Solution Growth Techniques
Home
Publications
The Epitaxial Growth of Ge on Si by Solution Growth Techniques
The Epitaxial Growth of Ge on Si by Solution Growth Techniques
JD
J. P. Donnelly
J. P. Donnelly
AM
A. G. Milnes
A. G. Milnes
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1 January 1966
journal article
Published by
The Electrochemical Society
in
Journal of the Electrochemical Society
Vol. 113
(3)
,
297-298
https://doi.org/10.1149/1.2423940
Abstract
No abstract available
Keywords
GERMANIUM
CRYSTAL GROWTH FROM SOLUTION
EPITAXIAL GROWTH
SEMICONDUCTOR EPITAXIAL LAYERS
STACKING FAULTS
CRACKS
Cited by 11 articles