Initial Stages of Epitaxial Growth of GaAs on (100) Silicon
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Arsenic-terminated Ge(111): An ideal 1×1 surfacePhysical Review Letters, 1985
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Thin Film PhenomenaJournal of the Electrochemical Society, 1970