Intervalence band absorption in semiconductor laser materials
- 1 August 1986
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 1 (2), 116-120
- https://doi.org/10.1088/0268-1242/1/2/004
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Temperature dependence of the threshold current density in InP-Ga0.28In0.72As0.6P0.4 (λ=1.3 μm) double heterostructure lasersJournal of Applied Physics, 1984
- The effects of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6 µm GalnAsP/InP lasersIEEE Journal of Quantum Electronics, 1983
- The case for Auger recombination in In1−xGaxAsyP1−yJournal of Applied Physics, 1982
- IIIA-4 a comparison of temperature dependence of lasing characteristics of 1.3 µm InGaAsP and GaAs DH lasersIEEE Transactions on Electron Devices, 1981
- The temperature dependence of the threshold current of GaInAsP/InP DH lasersIEEE Journal of Quantum Electronics, 1981
- The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band AbsorptionJapanese Journal of Applied Physics, 1980
- Temperature dependence of threshold and electrical characteristics of InGaAsP-InP d.h. lasersElectronics Letters, 1980
- Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure LasersJapanese Journal of Applied Physics, 1979
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Interfacial recombination at (AlGa)As/GaAs heterojunction structuresJournal of Applied Physics, 1976