63-75 GHz fT SiGe-base heterojunction bipolar technology
- 1 January 1990
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Explosion of poly-silicide links in laser programmable redundancy for VLSI memory repairIEEE Transactions on Electron Devices, 1989
- A reduced-field design concept for high-performance bipolar transistorsIEEE Electron Device Letters, 1989