High frequency behaviour of electron transfer in InP and GaAs from a dynamical Monte Carlo study
- 12 December 1972
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 5 (24), 3491-3503
- https://doi.org/10.1088/0022-3719/5/24/012
Abstract
A modified Monte Carlo method is used to study the dynamical behaviour of electron transfer in GaAs and InP. The frequency dependence of several transport quantities and of the DC-AC conversion efficiency is calculated assuming a square wave form of the applied electric field. From a detailed study of the frequency behaviour it must be concluded that in general the relaxation of the electron transfer mechanism is not only due to heating effects in the central Gamma valley as previously shown for GaAs but also due to intervalley scattering times if the latter are sufficiently large.Keywords
This publication has 18 references indexed in Scilit:
- The magnetophonon effect in epitaxial films of n-type inpJournal of Physics C: Solid State Physics, 1971
- Cyclotron resonance with epitaxial films of n type inpJournal of Physics C: Solid State Physics, 1971
- Dynamical study of the transferred-electron effect by a Monte Carlo techniqueElectronics Letters, 1971
- Band Structure of InGaP from Pressure ExperimentsJournal of Applied Physics, 1970
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Intra- and Interband Free-Carrier Absorption and the Fundamental Absorption Edge in-Type InPPhysical Review B, 1970
- Simple graphical method for calculating the efficiency of bulk negative-resistance microwave oscillatorsElectronics Letters, 1970
- The optical frequencies and dielectric constants of InPSolid State Communications, 1969
- Theoretical efficiency of the l.s.a. mode for gallium arsenide at frequencies above 10GHzElectronics Letters, 1968
- A new mode of operation for bulk negative resistance oscillatorsProceedings of the IEEE, 1966