Selective annealing of ion-implanted amorphous layers by Nd3+-YAG laser irradiation
- 1 November 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (9), 828-830
- https://doi.org/10.1063/1.90544
Abstract
Annealing behavior of phosphorus‐implanted silicon layers under Q‐switched Nd3+‐YAG laser irradiation was examined for samples with various dose (1014−1016 cm−2). Annealing efficiency in the implanted layer was found to be strongly influenced by the degree of damage to the substrate, namely, the annealing effect was localized to the amorphous regions. This selective annealing of the amorphous region was explained by the difference in the absorption coefficient of laser energy between crystalline and amorphous silicon.Keywords
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