Boron diffusion effects from p+ polysilicon gate in thin thermal oxide and plasma nitrided oxide
- 31 October 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 15 (1-4), 475-478
- https://doi.org/10.1016/0167-9317(91)90267-h
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Quantitative Auger sputter depth profiling of very thin nitrided oxideJournal of Applied Physics, 1990
- Plasma nitrided oxide films as a thin gate dielectricApplied Surface Science, 1989
- Submicrometer-channel CMOS for low-temperature operationIEEE Transactions on Electron Devices, 1987
- Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of SiliconJournal of Applied Physics, 1964