Experimental tests of proposed mechanisms for gradual degradation of GaAs double-heterostructure injection lasers
- 1 March 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 8 (3), 379-382
- https://doi.org/10.1109/jqe.1972.1076960
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- GaAs–AlxGa1−xAs Double Heterostructure Injection LasersJournal of Applied Physics, 1971
- Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradationMetallurgical Transactions, 1970
- Theoretical effects of exponential band tails on the properties of the injection laserSolid-State Electronics, 1969
- Role of optical flux and of current density in gradual degradation of GaAs injection lasersIEEE Journal of Quantum Electronics, 1969
- Physical basis of noncatastrophic degradation in GaAs injection lasersProceedings of the IEEE, 1969
- Degradation of GaAs injection devicesSolid-State Electronics, 1968
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964