EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS
- 1 November 1966
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 9 (9), 344-346
- https://doi.org/10.1063/1.1754779
Abstract
DC channel conductance of a number of experimental MOStransistor structures was measured and results used to calculate the surface state density and field‐effect mobility. The mobility was found to increase with decreasing surface state concentration and to approach bulk mobility in samples with the lowest number of surface states. This behavior is shown to be consistent with Coulomb scattering by electrons trapped in surface states.Keywords
This publication has 5 references indexed in Scilit:
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966
- Electron and hole mobilities in inversion layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1965
- Carrier Surface Scattering in Silicon Inversion LayersIBM Journal of Research and Development, 1964
- The silicon insulated-gate field-effect transistorProceedings of the IEEE, 1963
- Electrical Properties of-Type GermaniumPhysical Review B, 1954