Auger Recombination in GaAs

Abstract

Calculations have been made of both band‐to‐band and band‐to‐impurity Auger (nonradiative) recombination, using the formulations of Beattie and Landsberg, and Bess, respectively. It is shown first that the band‐to‐band Auger process cannot be neglected for high bandgap materials such as GaAs when heavily doped. Bess' formulation is applied for the first time to shallow traps. The calculations indicate that unavoidable Auger recombination processes dominate in heavily doped GaAs.