Modeling of the Reaction for Low Pressure Chemical Vapor Deposition of Silicon Dioxide

Abstract

A reaction model developed by Hitchman and Kane for semi‐insulating polysilicon (SIPOS) deposition is adapted to the case of silicon dioxide growth on silicon wafers at low temperature and pressure. The model is used to explain the radial nonuniformities associated with the oxide deposition process and the function of a cage surrounding the wafers. The effect of providing openings in the cage for introduction of reactants is examined. The proportionality of oxide growth rate and silane flow rate, as well as a near‐linear dependence of growth rate on wafer spacing, are also interpretable in terms of the reaction model.