In situ characterization of the growing a-Si:H surface by IR spectroscopy
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 765-770
- https://doi.org/10.1016/s0022-3093(05)80233-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Real-time detection of higher hydrides on the growing surface of hydrogenated amorphous silicon by infrared reflection absorption spectroscopyApplied Physics Letters, 1990
- Interaction between growing amorphous silicon and glass substrate evidenced by in situ infrared ellipsometryApplied Physics Letters, 1990
- Real time i n s i t u observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopyApplied Physics Letters, 1990
- Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous siliconSurface Science, 1990
- The adsorption of hydrogen on Si(111)-7×7 as studied by multiple internal reflection spectroscopyThe Journal of Chemical Physics, 1989
- In Situ IR Spectroscopic Study of a-Si:H Films Growing under Photo-Chemical Vapor Deposition ConditionJapanese Journal of Applied Physics, 1988
- Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si–Ge Alloys from Glow-Discharge PlasmaJapanese Journal of Applied Physics, 1986
- Hydrogen chemisorption on Si(111)-(7×7) and -(1×1) surfaces. A comparative infrared studyPhysical Review B, 1983
- Spectrophotometric determination of the optical properties of an adsorbed oxygen layer on goldSurface Science, 1971