Abstract
The electric-field-induced change in the linear dielectric function for the E1 and E1+Δ1 transitions of Ge, determined from low-field electroreflectance measurements, is shown to be in quantitative agreement with the third derivative of the linear dielectric function measured by high-resolution ellipsometry techniques. This result relates electroreflectance spectra to other types of modulation spectra and provides the first direct verification of the nonlinear optical interpretation of electroreflectance.