EPR determination of the concentration of chromium charge states in semi-insulating GaAs : Cr
- 1 October 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (10), 6251-6252
- https://doi.org/10.1063/1.325761
Abstract
Chromium can assume three different charge states in semi‐insulating GaAs :Cr. An EPR‐optical method is described which allows the Cr concentration in each of these states to be quantitatively determined. Typical results are given for a number of Cr‐doped GaAs samples.Keywords
This publication has 4 references indexed in Scilit:
- An intensity standard for electron paramagnetic resonance using chromium-doped corundum (Al2O3: Cr3+)Journal of Research of the National Bureau of Standards, 1978
- EPR of() in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversionPhysical Review B, 1977
- EPR ofin GaAs—evidence for strong Jahn-Teller effectsPhysical Review B, 1977
- The Preparation of Semi-Insulating Gallium Arsenide by Chromium DopingJournal of the Electrochemical Society, 1964