Effect of the Direct-Indirect Transition on the Hall Effect in Ga(As1−xPx)
- 1 January 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (1), 434
- https://doi.org/10.1063/1.1707856
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Growth and Dislocation Structure of Single-Crystal Ga (As1−xPx)Journal of Applied Physics, 1965
- Conduction Band Minima ofPhysical Review B, 1964
- COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONSApplied Physics Letters, 1962
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- High-Temperature Hall Coefficient in GaAsJournal of Applied Physics, 1960