Recombination-Enhanced Annealing of Gamma-Ray Induced Defects in GaAs1-xPx
- 1 September 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (9R)
- https://doi.org/10.1143/jjap.22.1368
Abstract
The recombination-enhanced annealing of gamma-ray induced defects (electron traps) in GaAs1-x P x (x=0, 0.35 and 0.45) has been studied through the change in the defect density monitored by DLTS. A significant enhancement of the annealing rate is observed only under the minority carrier injection condition. It is found that a finite activation energy of 0.4–0.5 eV still remains even when the energy emitted in minority carrier capture at a defect is larger than the activation energy of pure thermal annealing.Keywords
This publication has 7 references indexed in Scilit:
- Recombination-Enhanced Reactions in SemiconductorsAnnual Review of Materials Science, 1982
- Recombination enhanced defect reactionsSolid-State Electronics, 1978
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Recombination-enhanced annealing of the E1 and E2 defect levels in 1-MeV-electron–irradiated n-GaAsJournal of Applied Physics, 1976
- Observation of athermal defect annealing in GaPApplied Physics Letters, 1976
- Theory of recombination-enhanced defect reactions in semiconductorsPhysical Review B, 1975
- Observation of Recombination-Enhanced Defect Reactions in SemiconductorsPhysical Review Letters, 1974