Valence alternation pair model of charge storage in MNOS memory devices
- 1 June 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (6), 4190-4195
- https://doi.org/10.1063/1.326447
Abstract
Certain point defects in amorphous silicon nitride called valence alternation pairs (VAP) appear to be able to account not only for the charge storage and decay characteristics of MNOS memory devices but also for the fatigue phenomena that occur in these devices after undergoing a sufficiently large number of write‐erase operations. The theory and properties of VAP defects in the nitride are described. A model for the MNOS memory device based on the existence of VAP defects in the nitride is proposed. Charge storage, decay, and fatigue characteristics of MNOS devices are explained in terms of the model.Keywords
This publication has 48 references indexed in Scilit:
- Transient charge and current distributions in the nitride of MNOS devicesIEEE Transactions on Electron Devices, 1977
- Endurance of thin-oxide nonvolatile MNOS memory transistorsIEEE Transactions on Electron Devices, 1977
- Endurance and memory decay of MNOS devicesJournal of Applied Physics, 1976
- Nonvolatile semiconductor memory devicesProceedings of the IEEE, 1976
- Charge transfer properties of mnos structures as influenced by processing parametersJournal of Electronic Materials, 1975
- Measurements of charge propagation in Si3N4 filmsApplied Physics Letters, 1974
- Characterization of thin-oxide MNOS memory transistorsIEEE Transactions on Electron Devices, 1972
- Properties of MNOS structuresIEEE Transactions on Electron Devices, 1972
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969
- CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENTApplied Physics Letters, 1969