Properties of MNOS structures
- 1 June 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 19 (6), 826-836
- https://doi.org/10.1109/t-ed.1972.17500
Abstract
The properties of thin oxide MNOS structures are studied. An analytical theory for the switching time constant is derived and curves of the switching time constant versus the nitride field are computed. These curves are useful in the design of MNOS-memory transistors. The theory is compared with experiments. The normal current in the thin oxide MNOS structures is assumed to be a modified Fowler-Nordheim current. At small oxide thicknesses and low nitride field, an additional current is shown to exist that is attributed to direct tunneling into traps in the nitride. The discharge of MNOS structures is briefly discussed and is shown to be due to a direct tunneling of charge carriers from traps in the nitride into the semiconductor.Keywords
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