Switching properties of SrBi2Ta2O9 thin films produced by metalorganic decomposition
- 17 January 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (3), 369-371
- https://doi.org/10.1063/1.125757
Abstract
The process of polarization reversal in a SrBi 2 Ta 2 O 9 (SBT) thin filmcapacitor produced by a metalorganic decomposition method was investigated. The switching time (100–600 ns) and the reversible polarization have been measured at different voltages in the range of 0–5 V. It was found that by annealing the SBT sample in AR atmosphere at 400 °C, the switching times were significantly reduced. This indicates that oxygen vacancies in the film speed up nucleation and growth of new domains.Keywords
This publication has 17 references indexed in Scilit:
- Fatigue characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decompositionApplied Physics Letters, 1998
- Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitorsApplied Physics Letters, 1998
- Performance of srbi2ta2o9for low-voltage, non-volatile memory applicationsIntegrated Ferroelectrics, 1997
- Qualitative model for the fatigue-free behavior of SrBi2Ta2O9Applied Physics Letters, 1996
- Fatigue-free ferroelectric capacitors with platinum electrodesNature, 1995
- Preparation and Switching Kinetics of Pb(Zr, Ti)O3 Thin Films Deposited by Reactive SputteringJapanese Journal of Applied Physics, 1991
- Nanosecond switching of thin ferroelectric filmsApplied Physics Letters, 1991
- Ferroelectric MemoriesScience, 1989
- Switching kinetics of lead zirconate titanate submicron thin-film memoriesJournal of Applied Physics, 1988
- Domain Formation and Domain Wall Motions in Ferroelectric BaTiSingle CrystalsPhysical Review B, 1954