A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation
- 1 December 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (12), 510-512
- https://doi.org/10.1109/55.338420
Abstract
A new mode of operation for Silicon-On-Insulator (SOI) MOSFET is experimentally investigated. This mode gives rise to a Dynamic Threshold voltage MOSFET (DTMOS). DTMOS threshold voltage drops as gate voltage is raised, resulting in a much higher current drive than regular MOSFET at low V/sub dd/. On the other hand, V/sub t/ is high at V/sub gs/=0, thus the leakage current is low. Suitability of this device for ultra low voltage operation is demonstrated by ring oscillator performance down to V/sub dd/=0.5 V.Keywords
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