RBS and channelling analysis of As and Ga in laser doped silicon
- 15 January 1980
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 168 (1-3), 469-472
- https://doi.org/10.1016/0029-554x(80)91295-1
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Depth of melting produced by pulsed-laser irradiationApplied Physics Letters, 1979
- Dose dependence in the laser annealing of arsenic-implanted siliconApplied Physics Letters, 1978
- Properties of laser-assisted doping in siliconApplied Physics Letters, 1978
- Arsenic diffusion in silicon melted by high-power nanosecond laser pulsingApplied Physics Letters, 1978
- A comparative study of laser and thermal annealing of boron-implanted siliconJournal of Applied Physics, 1978