Photoresist erosion studied in an inductively coupled plasma reactor employing CHF3
- 1 July 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (4), 1998-2005
- https://doi.org/10.1116/1.590120
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactorJournal of Vacuum Science & Technology A, 1997
- Fluorocarbon high-density plasmas. II. Silicon dioxide and silicon etching using CF4 and CHF3Journal of Vacuum Science & Technology A, 1994
- Novel radio-frequency induction plasma processing techniquesJournal of Vacuum Science & Technology A, 1993
- X-ray photoelectron spectroscopy study of low energy CF+ ion interactions with siliconJournal of Vacuum Science & Technology A, 1993