Shallow-Donor Negative Ions and Spin-Polarized Electron Transport in Silicon
- 7 May 1973
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 30 (19), 909-912
- https://doi.org/10.1103/physrevlett.30.909
Abstract
Electron capture by neutral shallow donors is shown to be the dominant capture mechanism in uncompensated silicon at low temperatures. The mechanism is strongly dependent on spin polarization, which permits its separation from other competing mechanisms and the evaluation of its capture cross section. We also determine the negative donorion thermal ionization energy and lifetime.Keywords
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