Preparation of Pb(Zr,Ti)O3 Thin Films on Ir and IrO2 Electrodes

Abstract

Pb(Zr _x Ti_{1- x} )O₃ (PZT) thin films were prepared on Ir and IrO₂ electrodes. Ir has very similar properties to Pt, and IrO₂ is a conductive oxide. Perovskite single-phase PZT thin films were obtained on their electrodes. PZT thin films were grown by the conventional sol-gel method with rapid thermal annealing (RTA) at 700° C. When Pt thin films were deposited directly on poly-Si, PtSi layers were formed, and PZT thin films on the Pt had very poor crystallinity. When an IrO₂ layer was formed between PZT and poly-Si, a high-quality PZT thin film was obtained. Moreover, when electrodes including the IrO₂ layer were used, fatigue properties of PZT thin films were drastically improved.