Properties of 1.4*2.8 mu m/sup 2/ active area M-R elements
- 1 November 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 27 (6), 5517-5519
- https://doi.org/10.1109/20.278888
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Quadrupled nondestructive outputs from magnetoresistive memory cells using reversed word fieldsJournal of Applied Physics, 1990