On the formation of semiconductor interfaces

Abstract

A critical review of the different theoretical models proposed for explaining the metal-semiconductor and semiconductor-semiconductor interfaces is presented. Although no attempt to present a thorough review of the experimental evidence is made, the authors discuss the most relevant information concerning those interfaces. Their discussion concentrates mainly on the models that have received more widespread acceptance: the induced density of interface states model and the defect model. A few comments on other cases are also made, and a critical evaluation of the different models is presented.