A doping-precipitated morphology in plasma-deposited a-Si:H
- 15 January 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (2), 92-94
- https://doi.org/10.1063/1.92267
Abstract
A grossly inhomogeneous, noncolumnar morphology has been observed in doped, plasma‐deposited hydrogenated amorphous silicon (a‐Si:H) within critical ranges of the diborane to silane ratio in the gas phase. The diborane level can be as low as 5 ppm and depends both on the electrode self‐bias potential and the growth rate. Undoped specimens prepared under the same deposition conditions have properties typical of device‐grade a‐Si:H. These morphology observations suggest a structural origin for some doping‐dependent properties in a‐Si:H.Keywords
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