Experimental verification of operation of the indium-doped infrared-sensing MOSFET

1 December 1975

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 22 (12), 1100-1101
https://doi.org/10.1109/T-ED.1975.18333

Abstract

Verification demonstrating operation of the indium-doped silicon infrared-sensing MOSFET (IRFET) is provided. This is a new type of detector for the 3-5-µm infrared wavelength regions, and the detector has been found to operate according to the original design proposal and criteria.

Keywords

DETECTOR
INFRARED SENSING
NEW TYPE
INDIUM DOPED
SENSING MOSFET
VERIFICATION DEMONSTRATING
DEMONSTRATING OPERATION

Cited by 3 articles