DOPING OF SILICON BY ION IMPLANTATION
- 15 April 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 12 (8), 244-246
- https://doi.org/10.1063/1.1651975
Abstract
Radiation damages created in silicon single crystals bombarded with 10‐keV aluminum ions were examined by means of electron diffraction method. A deep penetration of aluminum ion in silicon was observed, extending to 0.58 μ. This penetration was depressed by removing the bombarded surface layer about 800 Å in thickness before annealing. From these results, we interpret the deep penetration as a radiation enhanced diffusion effect.Keywords
This publication has 3 references indexed in Scilit:
- The Channelling of Ions through Silicon DetectorsIEEE Transactions on Nuclear Science, 1964
- Ion Bombardment of Silicon in a Glow DischargeJournal of Applied Physics, 1963
- Measurement of Sheet Resistivities with the Four-Point ProbeBell System Technical Journal, 1958