DOPING OF SILICON BY ION IMPLANTATION

Abstract

Radiation damages created in silicon single crystals bombarded with 10‐keV aluminum ions were examined by means of electron diffraction method. A deep penetration of aluminum ion in silicon was observed, extending to 0.58 μ. This penetration was depressed by removing the bombarded surface layer about 800 Å in thickness before annealing. From these results, we interpret the deep penetration as a radiation enhanced diffusion effect.