Si/SiGe heterojunction bipolar transistor made by molecular-beam epitaxy
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (10), 2363-2366
- https://doi.org/10.1109/16.40923
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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