Anticrossing of Raman lines in Se: Van Vleck–type bound magnetic polaron
- 12 June 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 62 (24), 2865-2868
- https://doi.org/10.1103/physrevlett.62.2865
Abstract
Anticrossing of two Raman lines, that of a donor-electron spin flip and that of an intra--ion excitation, has been observed in Se, a Van Vleck–type semimagnetic semiconductor. A new model of a bound magnetic polaron (BMP) is reported, which accounts for the experimental data. At zero magnetic field, this BMP is characterized by a finite local spin polarization at its center, 〈〉=0.06, and by an exchange energy shift of its ground state of Δ=-0.26 for x=0.018, despite the fact that the spin-flip energy of the donor electron is strictly zero.
This publication has 8 references indexed in Scilit:
- Resonant raman scattering on low energy excited states of Fe++ in Cd1-xFexSeSolid State Communications, 1989
- Magnetic properties of hexagonal Fe-based semimagnetic semiconductorsSolid State Communications, 1988
- Nonmagnetic ground state ofin CdSe: Absence of bound magnetic polaronPhysical Review Letters, 1988
- Fe-based semimagnetic semiconductors (invited)Journal of Applied Physics, 1988
- Acceptor-bound magnetic polaron inTe semimagnetic semiconductorsPhysical Review B, 1985
- Effect of Fluctuations of Magnetization on the Bound Magnetic Polaron: Comparison with ExperimentPhysical Review Letters, 1982
- Exchange-Induced Spin-Flip Raman Scattering in a Semimagnetic SemiconductorPhysical Review Letters, 1981
- Study of Two-Electron Transitions of a Donor in CdSePhysical Review B, 1972